r07ds0989ej0100 rev.1.00 page 1 of 6 dec 25, 2012 data sheet pa2826t1s n-channel mosfet 20 v , 27 a , 4.3 m description the pa2826t1s is n-channel mos field effect transistor designed for power management applications of portable equipment . features ? v dss = 20 v (t a = 25 c) ? low on-state resistance ? r ds(on) = 4.3 m max. (v gs = 8.0 v, i d = 13.5 a) ? 2.5 v gate-drive available ? small & thin type surface mount package with heat spreader ? pb-free and halogen free ordering information part no. lead plating packing package pa2826t1s-e2-at ? 1 pure sn(tin) tape 5000 p/reel hwson-8 0.022 g typ. note: ? 1. pb-free (this product does not contain pb in external electrode and other parts.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 20 v gate to source voltage (v ds = 0 v) v gss 12 v drain current (dc) (t c = 25 c) i d(dc) 27 a drain current (pulse) ? 1 i d(pulse) 81 a total power dissipation ? 2 p t1 1.5 w total power dissipation (pw = 10 sec) ? 2 p t2 3.8 w total power dissipation (t c = 25 c) p t3 20 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c thermal resistance channel to ambient thermal resistance ?2 r th(ch-a) 83.3 c/w channel to case(drain) thermal resistance r th(ch-c) 6.25 c/w notes: ? 1. pw 10 s, duty cycle 1% ? 2. mounted on a glass epoxy boar d of 25.4 mm x 25.4 mm x 0.8 mmt r07ds0989ej0100 rev.1.00 dec 25, 2012 hwson-8
pa2826t1s r07ds0989ej0100 rev.1.00 page 2 of 6 dec 25, 2012 electrical characteristics (t a = 25 c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss 1 a v ds = 20 v, v gs = 0 v gate leakage current i gss 10 a v gs = 12 v, v ds = 0 v gate cut-off voltage v gs(off) 0.5 1.5 v v ds = 10 v, i d = 1 ma forward transfer admittance ? ? 1 r ds(on)1 3.4 4.3 m v gs = 8.0 v, i d = 13.5 a r ds(on)2 3.9 4.8 m v gs = 4.5 v, i d = 13.5 a r ds(on)3 5.4 9.9 m v gs = 2.5 v, i d = 6.8 a input capacitance c iss 3610 pf v ds = 10 v, output capacitance c oss 1230 pf v gs = 0 v, reverse transfer capacitance c rss 1130 pf f = 1 mhz turn-on delay time t d(on) 50 ns v dd = 10 v, i d = 13.5 a, v gs = 4.0 v, rise time t r 94 ns turn-off delay time t d(off) 120 ns r g = 10 fall time t f 120 ns total gate charge q g 37 nc v dd = 10 v, gate to source charge q gs 7 nc v gs = 4.0 v, gate to drain charge q gd 18 nc i d = 27 a body diode forward voltage ? s note: ? 1. pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
pa2826t1s r07ds0989ej0100 rev.1.00 page 3 of 6 dec 25, 2012 typical characteristics (t a = 25c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 t c - case temperature - c i d - drain current - a 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 tc=25c single pulse power dissipation limited id(pulse)=81a pw=100us 200us 500us 1ms 10ms dc rds(on) limited vgs=8v id(dc)=27a v ds - drain to source voltage ? v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th ( ch- a) : mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt) single pulse r th(ch-a) = 83.3c/w r th(ch-c) = 6.25c/w pw - pulse width - s drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 20 40 60 80 0 0.2 0.4 0.6 0.8 vgs=8v pulsed 2.5v 4.5v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 00.511.52 vds = 10v pulsed ta=150c 75c 25c -55c v gs - gate to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
pa2826t1s r07ds0989ej0100 rev.1.00 page 4 of 6 dec 25, 2012 gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) ? gate to source cut-off voltage - v 0.0 0.5 1.0 1.5 -50 0 50 100 150 vds = 10v id=1.0ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 100 0.01 0.1 1 10 100 vds = 10v pulsed ta=150c 75c 25c -55c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 1 10 100 vgs=2.5v 4.5v 8.0v pulsed i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 024681012 id=13.5a pulsed v gs - gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 -50 0 50 100 150 vgs=2.5v id=6.8a pulsed 8.0v 13.5a 4.5v 13.5a t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 0.1 1 10 100 vgs = 0v f = 1.0mhz crss ciss coss v ds - drain to source voltage - v
pa2826t1s r07ds0989ej0100 rev.1.00 page 5 of 6 dec 25, 2012 switching characteristics dynamic input characteristics td(on),tr,td(off),tr ? switching time - ns 10 100 1000 0.1 1 10 100 vdd = 10v vgs = 4.0v rg = 10 td(on) tr td(off) t f i d - drain current - a v gs - gate to source voltage - v 0 1 2 3 4 0 1020304050 vdd=4v id=15.8a 16v 27a 10v 27a q g - gate charge - nc source to drain diode forward voltage i f - diode forward current - a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 pulsed vgs=8v 0v 2.5v 4.5v v f(s-d) - source to drain voltage - v
pa2826t1s r07ds0989ej0100 rev.1.00 page 6 of 6 dec 25, 2012 package drawings (unit: mm) hwson-8 equivalent circuit source body diode gate protection diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickl y dissipate it once, when it has occurred. 4 3 2 1 5 6 7 8 1,2,3 : source 4 : gate 5,6,7,8 : drain renesas package code : pwsn0008jb-a
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